Method of stabilizing flowable dielectric layer

• Main Authors: ZHANG FUWEI, CHEN DONGHUA, YUAN ZHIQI, WANG SHASHA
• Format: Patent
• Language: Chinese; English
• Published: 19.02.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a method for stabilizing a flowable dielectric layer. The method comprises the following steps of 1, forming the flowable dielectric layer by adopting an FCVD process; 2, carrying out a curing process on the flowable dielectric layer; and 3, carrying out stabilization operation on the flowable dielectric layer in an ozone atmosphere, wherein the stabilization operation timeenables the state of the flowable dielectric layer to be aged to a stable value. According to the invention, the stabilization operation time can be reduced, and the density and the quality of the stabilized flowable dielectric layer can be increased. 本发明公开了一种可流动性电介质层的稳定方法，包括如下步骤：步骤一、采用FCVD工艺形成可流动性电介质层；步骤二、对可流动性电介质层进行固化工艺；步骤三、将可流动性电介质层在臭氧气氛下进行稳定化作业，稳定化作业时间使可流动性电介质层的状态老化到稳定值。本发明能减少稳定化作业时间，能增加可流动性电介质层稳定后的密度和质量。