METHODS OF MINIMIZING WAFER BACKSIDE DAMAGE IN SEMICONDUCTOR WAFER PROCESSING

The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting f...

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Main Authors KHAJA ABDUL AZIZ, BALASUBRAMANIAN GANESH, HU LIANGFA, RATHI SUDHA S
Format Patent
LanguageChinese
English
Published 01.01.2021
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Abstract The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride. 本公开一般关于用于半导体处理的基板支撑件。在一个实施例中,提供了基板支撑件。基板支撑件包括:主体,包含基板夹持表面;电极,设置在主体内;多个基板支撑特征,形成在基板夹持表面上,其中基板支撑特征的数量从基板夹持表面的中心到基板夹持表面的边缘径向增加;以及调节层,形成在多个基板支撑特征上,调节层包含氮化硅。
AbstractList The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride. 本公开一般关于用于半导体处理的基板支撑件。在一个实施例中,提供了基板支撑件。基板支撑件包括:主体,包含基板夹持表面;电极,设置在主体内;多个基板支撑特征,形成在基板夹持表面上,其中基板支撑特征的数量从基板夹持表面的中心到基板夹持表面的边缘径向增加;以及调节层,形成在多个基板支撑特征上,调节层包含氮化硅。
Author BALASUBRAMANIAN GANESH
KHAJA ABDUL AZIZ
RATHI SUDHA S
HU LIANGFA
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Snippet The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title METHODS OF MINIMIZING WAFER BACKSIDE DAMAGE IN SEMICONDUCTOR WAFER PROCESSING
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