Low-power-consumption nonvolatile resistive random access memory series and preparation method thereof

• Main Authors: ZHANG ZEPU, LIU JUQING, NIE YIJIE
• Format: Patent
• Language: Chinese; English
• Published: 18.12.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a low-power-consumption nonvolatile resistive random access memory series and a preparation method thereof, which belong to the field of resistive random access memory devices.The access memory series comprises a series of memories, and each memory comprises a bottom electrode with adjustable conductivity, a resistive function layer with nano holes in the surface, and a top electrode. Specifically, a reduced graphene oxide conductive film with adjustable conductivity prepared by a high-temperature thermal reduction method is used as a bottom electrode; A resistive function layer film with nano holes in the surface and adjustable pore size are prepared on the bottom electrode by a mixed solvent spin-coating method; and metal aluminum is evaporated to serve as a topelectrode. The access memory device has the nonvolatile storage characteristic, has the advantages of being simple in structure, easy to manufacture, low in cost, low in power consumption, high in stability and the like, and h