Method for monitoring silicon film thickness and uniformity in low pressure chemical vapor deposition (LPCVD) process

• Main Authors: DUAN ZHIFANG, ZHANG CONG
• Format: Patent
• Language: Chinese; English
• Published: 27.11.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention relates to a method for monitoring silicon film thickness and uniformity in a low pressure chemical vapor deposition (LPCVD) process, and belongs to the technical field of semiconductorsilicon wafer CVD back-seal layer processing technologies. The method for monitoring silicon film thickness and uniformity in the LPCVD process comprises the following operation steps of opening a bingate of a reaction furnace, placing multiple groups of silicon wafers on a silicon boat frame, additionally arranging a monitoring chip between each two adjacent groups of silicon wafers, and then closing the bin gate of the reaction furnace; at the time, opening a pneumatic ball valve and a hand valve, starting a vacuum pump to carry out a gas circulation conveying process, and meanwhile, usinga temperature control base for controlling the temperature of a heating furnace wall in a furnace shell; after a film is formed through the LPCVD process, measuring film thickness and uniformity of the multiple monitoring chips