SEMICONDUCTOR NANOPARTICLES, METHOD FOR PRODUCING SAME, AND LIGHT-EMITTING DEVICE

• Main Authors: UEMATSU TARO, TORIMOTO TSUKASA, OYAMATSU DAISUKE, KAMEYAMA TATSUYA, KUWABATA SUSUMU, WAJIMA KAZUTAKA
• Format: Patent
• Language: Chinese; English
• Published: 20.10.2020
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NANOTECHNOLOGY; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

Provided is a method for producing semiconductor nanoparticles that exhibit band-edge emission and have a superior quantum yield. This method for producing semiconductor nanoparticles comprises: raising the temperature of a first mixture containing a salt of Ag, a salt containing In and/or Ga, a solid compound that serves as a source for supplying S, and an organic solvent, to a temperature in therange of 125-175 DEG C; following the raising of the temperature, subjecting the mixture to a thermal treatment at a temperature in the range of 125-175 DEG C for 3 seconds or longer, to obtain a solution containing semiconductor nanoparticles; and, following the thermal treatment, lowering the temperature of the solution containing the semiconductor nanoparticles, wherein the solid compound serving as a source for supplying S contains thiourea. 本发明提供一种呈现带边发射，量子产率优异的半导体纳米粒子的制造方法。半导体纳米粒子的制造方法，包括如下内容：将含有Ag的盐、含In和Ga中的至少一种的盐、作为S的供给源的固体状化合物、和有机溶剂的第一混合物，升温至处于125℃以上且175℃以下的范围的温度；继所述升温之后，以处于125℃以上且175℃以下的范围的温度，对于所述混合物进行3秒以上热