Spin orbit moment-based memory cell and manufacturing method thereof

• Main Authors: MENG HAO, CHI KEQUN
• Format: Patent
• Language: Chinese; English
• Published: 18.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a spin orbital moment-based memory cell and a manufacturing method thereof. The spin orbital moment-based memory cell includes a magnetic tunnel junction including a free layer,a barrier layer and a reference layer stacked in sequence; a horizontal spin orbital moment effect layer in contact with the bottom surface of the free layer; and a vertical spin orbital moment effect layer, and a vertical spin orbital moment effect layer which covers one side wall of the free layer. According to the spin orbital moment-based memory cell, deterministic overturning of the magnetization direction of the free layer can be achieved under the condition that an external magnetic field is not needed. 本发明提供一种基于自旋轨道矩的存储单元及其制造方法。所述基于自旋轨道矩的存储单元包括：磁性隧道结，所述磁性隧道结包括依次堆叠的自由层、势垒层和参考层；水平自旋轨道矩效应层，所述水平自旋轨道矩效应层与所述自由层的底面接触；竖直自旋轨道矩效应层，所述竖直自旋轨道矩效应层覆盖于所述自由层的一个侧壁。本发明提供的基于自旋轨道矩的存储单元在无需外部磁场的情况下能够实现自由层磁化方向的确定性翻转。