METHOD FOR EVALUATING SILICON LAYER, AND METHOD FOR PRODUCING SILICON EPITAXIAL WAFER

Provided is a method for evaluating a silicon layer, the method including: forming an oxide film on the surface of the silicon layer; performing a charging process to negatively charge the surface ofthe formed oxide film; and measuring, by the van der Pauw method, the resistivity of the silicon laye...

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Bibliographic Details
Main Authors MIYAZAKI SUMIO, MAKISE SAYAKA, SAMATA SHUICHI, MITSUGI NORITOMO
Format Patent
LanguageChinese
English
Published 21.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:Provided is a method for evaluating a silicon layer, the method including: forming an oxide film on the surface of the silicon layer; performing a charging process to negatively charge the surface ofthe formed oxide film; and measuring, by the van der Pauw method, the resistivity of the silicon layer after the charging process. 本发明提供一种硅层的评价方法，其包括：在硅层的表面上形成氧化膜；进行使上述形成的氧化膜的表面带有负电荷的带电处理；以及通过范德堡(van der Pauw)法测定上述带电处理后的硅层的电阻率。
Bibliography:Application Number: CN201980007795