Resonant cavity enhanced optical detector and manufacturing method thereof

The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. The resonant cavity enhanced optical detector comprises a substrate, a bottom DBR and a GaAs grating layer. The bottom DBR is arranged on the substrate and comprises a first distr...

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Main Authors ZHANG LUJIAN, FAN XINYE, WANG BAOYONG
Format Patent
LanguageChinese
English
Published 19.06.2020
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Abstract The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. The resonant cavity enhanced optical detector comprises a substrate, a bottom DBR and a GaAs grating layer. The bottom DBR is arranged on the substrate and comprises a first distributed Bragg reflector arranged in a stacked mode, and the GaAs grating layer is arranged on the bottom DBR. The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. GaAs is used as a substrate of the detector. The GaAs grating layer isgrown on the bottom DBR by adopting an epitaxial method, and the polarization selection function of the resonant cavity enhanced optical detector is realized by utilizing the polarization selection characteristic of the grating according to the characteristic that the diffraction characteristic of the grating is often related to polarization when the period of the grating reaches the wavelength magnitude or is less than
AbstractList The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. The resonant cavity enhanced optical detector comprises a substrate, a bottom DBR and a GaAs grating layer. The bottom DBR is arranged on the substrate and comprises a first distributed Bragg reflector arranged in a stacked mode, and the GaAs grating layer is arranged on the bottom DBR. The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. GaAs is used as a substrate of the detector. The GaAs grating layer isgrown on the bottom DBR by adopting an epitaxial method, and the polarization selection function of the resonant cavity enhanced optical detector is realized by utilizing the polarization selection characteristic of the grating according to the characteristic that the diffraction characteristic of the grating is often related to polarization when the period of the grating reaches the wavelength magnitude or is less than
Author FAN XINYE
WANG BAOYONG
ZHANG LUJIAN
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Snippet The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. The resonant cavity enhanced optical...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Resonant cavity enhanced optical detector and manufacturing method thereof
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