Resonant cavity enhanced optical detector and manufacturing method thereof
The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. The resonant cavity enhanced optical detector comprises a substrate, a bottom DBR and a GaAs grating layer. The bottom DBR is arranged on the substrate and comprises a first distr...
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Format | Patent |
Language | Chinese English |
Published |
19.06.2020
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Abstract | The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. The resonant cavity enhanced optical detector comprises a substrate, a bottom DBR and a GaAs grating layer. The bottom DBR is arranged on the substrate and comprises a first distributed Bragg reflector arranged in a stacked mode, and the GaAs grating layer is arranged on the bottom DBR. The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. GaAs is used as a substrate of the detector. The GaAs grating layer isgrown on the bottom DBR by adopting an epitaxial method, and the polarization selection function of the resonant cavity enhanced optical detector is realized by utilizing the polarization selection characteristic of the grating according to the characteristic that the diffraction characteristic of the grating is often related to polarization when the period of the grating reaches the wavelength magnitude or is less than |
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AbstractList | The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. The resonant cavity enhanced optical detector comprises a substrate, a bottom DBR and a GaAs grating layer. The bottom DBR is arranged on the substrate and comprises a first distributed Bragg reflector arranged in a stacked mode, and the GaAs grating layer is arranged on the bottom DBR. The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. GaAs is used as a substrate of the detector. The GaAs grating layer isgrown on the bottom DBR by adopting an epitaxial method, and the polarization selection function of the resonant cavity enhanced optical detector is realized by utilizing the polarization selection characteristic of the grating according to the characteristic that the diffraction characteristic of the grating is often related to polarization when the period of the grating reaches the wavelength magnitude or is less than |
Author | FAN XINYE WANG BAOYONG ZHANG LUJIAN |
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DocumentTitleAlternate | 谐振腔增强型光探测器及其制造方法 |
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RelatedCompanies | PACIFIC (LIAOCHENG) OPTOELECTRONIC TECHNOLOGY CO., LTD |
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Snippet | The embodiment of the invention provides a resonant cavity enhanced optical detector and a manufacturing method thereof. The resonant cavity enhanced optical... |
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Title | Resonant cavity enhanced optical detector and manufacturing method thereof |
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