DEEP TRENCH ISOLATION STRUCTURES RESISTANT TO CRACKING, IMAGE SENSOR STRUCTURE AND FORMING METHOD THEREOF

• Main Authors: LIN KUN-YU, WU MINGI, SU BOANG, YEH YU-LUNG, TU CHIEN, CHEN SHIH-SHIUNG, FANG CHUNIEH
• Format: Patent
• Language: Chinese; English
• Published: 07.01.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectriclayer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the die...