VERY HIGH CAPACITANCE FILM CAPACITOR AND METHOD FOR THE PRODUCTION OF SAME

• Main Author: DEPOND JEAN-MICHEL
• Format: Patent
• Language: Chinese; English
• Published: 04.06.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; ELECTRICITY

The present invention relates in particular to a very high capacitance film capacitor (1) that comprises a dielectric layer (100) consisting of at least one dielectric film (100a,..., 100i), each dielectric film (100a,..., 100i) of this dielectric layer (100) having the following parameters: a relative dielectric permittivity [(epsilon)fi] such that [epsilon]fi>=10, a thickness [efi] such that 0.05 [mu]m<=efi<=50 [mu]m, a dielectric strength [Efi] such that Efi>=50 V/[mu]m, parameters in which f signifies film and i>=1, i designating the ith dielectric film (100i) of said dielectric layer (100), this dielectric layer (100) separating a first electronic charge carrier structure (200) from a second electronic charge carrier structure (300), these two structures having an opposite surface (S)separated by the dielectric layer(100). 本发明特别涉及一种甚高电容的膜电容器(1)，其包括由至少一个介电膜(100a，...，100i)构成的介电层(100)，该介电层(100)的每个介电膜(100a，...，100i)具有以下参数：-相对介电常数使得-厚度[e]使得0.05μm≤e≤50μm，-介电强度使得在参数中"f"表示"膜"且i≥1的参数，"i"表示所述介电层(100)的"第i"介电膜(100i)