SOI平台上的量子限制斯塔克效应电吸收调制器
电吸收调制器。调制器包括SOI波导;有源区,所述有源区包括多量子阱(MQW)区;以及耦合器,用于将SOI波导耦合到有源区。耦合器包括:过渡波导耦合区;缓冲波导耦合区;以及锥形区;其中,过渡波导耦合区耦合SOI波导与缓冲波导耦合区之间的光;以及缓冲波导耦合区经由锥形区耦合过渡波导区与有源区之间的光。 An electroabsorption modulator. The modulator comprising an SOI waveguide; an active region, the active region comprising a multiple quantum well (MQW...
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Format | Patent |
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Language | Chinese |
Published |
30.08.2022
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Subjects | |
Online Access | Get full text |
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Summary: | 电吸收调制器。调制器包括SOI波导;有源区,所述有源区包括多量子阱(MQW)区;以及耦合器,用于将SOI波导耦合到有源区。耦合器包括:过渡波导耦合区;缓冲波导耦合区;以及锥形区;其中,过渡波导耦合区耦合SOI波导与缓冲波导耦合区之间的光;以及缓冲波导耦合区经由锥形区耦合过渡波导区与有源区之间的光。
An electroabsorption modulator. The modulator comprising an SOI waveguide; an active region, the active region comprising a multiple quantum well (MQW) region; and a coupler for coupling the SOI waveguide to the active region. The coupler comprising: a transit waveguide coupling region; a buffer waveguide coupling region; and a taper region; wherein, the transit waveguide coupling region couples light between the SOI waveguide and the buffer waveguide coupling region; and the buffer waveguide coupling region couples light between the transit waveguide region and the active region via the taper region. |
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Bibliography: | Application Number: CN201780042308 |