POLYIMIDE FILM, COPPER-CLAD LAMINATE, AND CIRCUIT SUBSTRATE
Provided is a polyimide film having a non-thermoplastic polyimide layer, wherein: the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer preferably contains at least one ofa biphenyl-tetracarboxylic dianhydride (BPDA) residue derived from 3,3',4,4'-BPDA and a ph...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
21.05.2019
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Subjects | |
Online Access | Get full text |
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Summary: | Provided is a polyimide film having a non-thermoplastic polyimide layer, wherein: the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer preferably contains at least one ofa biphenyl-tetracarboxylic dianhydride (BPDA) residue derived from 3,3',4,4'-BPDA and a phenylenebis(trimellitic monoester) dianhydride (TAHQ) residue derived from 1,4-TAHQ, as well as at least one of a pyromellitic dianhydride (PMDA) residue derived from PMDA and a napthalenetetracarboxylic dianhydride (NTCDA) residue derived from 2,3,6,7-NTCDA, the total amount of these residues being at least80 mol parts with respect to 100 mol parts of a tetracarboxylic acid residue; and the dielectric loss tangent (Df) is preferably 0.004 or less.
一种具有非热塑性聚酰亚胺层的聚酰亚胺膜,构成非热塑性聚酰亚胺层的非热塑性聚酰亚胺优选为相对于四羧酸残基的100摩尔份而合计包含80摩尔份以上的由3,3'、4,4'-联苯四羧酸二酐(BPDA)所衍生的BPDA残基及由1,4-亚苯基双(偏苯三甲酸单酯)二酐(TAHQ)所衍生的TAHQ残基中的至少一种以及由均苯四甲酸二酐(PMDA)所衍生的PMDA残基及由2,3,6,7-萘四羧酸二酐(NTCDA)所衍生的NTCDA残基中的至少一种,且优选为介电正切(Df)为0.004以下。 |
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Bibliography: | Application Number: CN201780059180 |