MEMORY DEVICE

• Main Authors: KWON, KIHUN, KIM, JAE IL
• Format: Patent
• Language: Chinese; English
• Published: 26.03.2019
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A semiconductor device includes an initial buffer signal generation circuit and a buffer signal generation circuit. The initial buffer signal generation circuit includes an initial buffer circuit which is activated if an initialization operation terminates. The initial buffer signal generation circuit generates an initial buffer signal from an external control signal in response to a first reference voltage signal. The buffer signal generation circuit includes a buffer circuit which is activated in response to the initial buffer signal. The buffer signal generation circuit generates a buffer signal from the external control signal in response to a second reference voltage signal. 种半导体器件包括初始缓冲器信号发生电路和缓冲器信号发生电路。初始缓冲器信号发生电路包括如果初始化操作终止则被激活的初始缓冲器电路。初始缓冲器信号发生电路响应于第参考电压信号而从外部控制信号产生初始缓冲器信号。缓冲器信号发生电路包括响应于初始缓冲器信号而被激活的缓冲器电路。缓冲器信号发生电路响应于第二参考电压信号而从外部控制信号产生缓冲器信号。