Band gap reference circuit with high power supply rejection ratio in wide frequency range
The invention discloses a band gap reference circuit with a high power supply rejection ratio in a wide frequency range. The circuit comprises an operational amplifier VG, a triode Q0, a triode Q1, anMOS tube M0, resistors R0, R1 and R2 and a capacitor C0, wherein a forward input end of the operatio...
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Main Authors | , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
08.03.2019
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Abstract | The invention discloses a band gap reference circuit with a high power supply rejection ratio in a wide frequency range. The circuit comprises an operational amplifier VG, a triode Q0, a triode Q1, anMOS tube M0, resistors R0, R1 and R2 and a capacitor C0, wherein a forward input end of the operational amplifier VG is marked as a VP point; a reverse input end of the operational amplifier VG is marked as a VN point, an output end of the operational amplifier VG is connected with a grid electrode of the MOS tube M0, and drain output points of the MOS tube M0 are marked as VBG points; the two resistors R1 with equal resistance values are connected between the VBG points and between the VP point and the VN point respectively, the resistor R2 and the capacitor C0 are connected in series and then connected in parallel with the two resistors R1 respectively, and the two ends of the resistor R0 are connected with the VP point and an emitter electrode of the triode Q0 respectively; the base electrodes of the triodes Q |
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AbstractList | The invention discloses a band gap reference circuit with a high power supply rejection ratio in a wide frequency range. The circuit comprises an operational amplifier VG, a triode Q0, a triode Q1, anMOS tube M0, resistors R0, R1 and R2 and a capacitor C0, wherein a forward input end of the operational amplifier VG is marked as a VP point; a reverse input end of the operational amplifier VG is marked as a VN point, an output end of the operational amplifier VG is connected with a grid electrode of the MOS tube M0, and drain output points of the MOS tube M0 are marked as VBG points; the two resistors R1 with equal resistance values are connected between the VBG points and between the VP point and the VN point respectively, the resistor R2 and the capacitor C0 are connected in series and then connected in parallel with the two resistors R1 respectively, and the two ends of the resistor R0 are connected with the VP point and an emitter electrode of the triode Q0 respectively; the base electrodes of the triodes Q |
Author | DUAN QUANZHEN ZHANG GUOHUI ZHANG XUETAO DING YUEMIN HUANG SHENGMING LI SUWEN |
Author_xml | – fullname: DING YUEMIN – fullname: HUANG SHENGMING – fullname: ZHANG GUOHUI – fullname: ZHANG XUETAO – fullname: LI SUWEN – fullname: DUAN QUANZHEN |
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DocumentTitleAlternate | 种宽频率内高电源抑制比的带隙基准电路 |
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Notes | Application Number: CN201811408651 |
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Snippet | The invention discloses a band gap reference circuit with a high power supply rejection ratio in a wide frequency range. The circuit comprises an operational... |
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Title | Band gap reference circuit with high power supply rejection ratio in wide frequency range |
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