SEMICONDUCTOR DEVICE STRUCTURE

• Main Authors: CHEN SHENGIEH, LIU MING CHYI, LIU SHIHANG
• Format: Patent
• Language: Chinese; English
• Published: 05.03.2019
• Subjects: ELECTRICITY

An integrated circuit for a flash memory device with enlarged spacing between select and memory gate structures is provided. The enlarged spacing is obtained by forming corner recesses at the select gate structure so that a top surface with a reduced dimension of the select gate structure is obtaine...