Three-dimensional titanium nitride as well as preparation method and application thereof

The invention belongs to the field of preparation of inorganic semiconductor nano materials, and discloses three-dimensional titanium nitride as well as a preparation method and application thereof. According to the three-dimensional titanium nitride, tetrabutyl titanate, hydrochloric acid, titanium...

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Main Authors ZHOU QIUMAN, XIAO CHUMIN, PAN ZHANCHANG, HUANG ZHAOJIE, WEI ZHIGANG, CHEN XIAOXIANG, FENG GUANGWEN, HU GUANGHUI
Format Patent
LanguageChinese
English
Published 25.01.2019
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Abstract The invention belongs to the field of preparation of inorganic semiconductor nano materials, and discloses three-dimensional titanium nitride as well as a preparation method and application thereof. According to the three-dimensional titanium nitride, tetrabutyl titanate, hydrochloric acid, titanium dioxide P25 and distilled water are added into a high-pressure reaction kettle for ultrasonic treatment and stirring, then heating is carried out at the temperature of 140-200 DEG C for reaction, after the reaction is ended, natural cooling, suction filtration, washing and drying treatment are carried out, nitriding treatment is carried out on obtained powder at the temperature of 700-900 DEG C, and cooling is carried out to reach the room temperature so as to obtain the three-dimensional titanium nitride. The method has the advantages of being simple to operate, cheap in raw materials capable of being used for large-scale production; and the prepared three-dimensional titanium nitride hasthe advantages of being g
AbstractList The invention belongs to the field of preparation of inorganic semiconductor nano materials, and discloses three-dimensional titanium nitride as well as a preparation method and application thereof. According to the three-dimensional titanium nitride, tetrabutyl titanate, hydrochloric acid, titanium dioxide P25 and distilled water are added into a high-pressure reaction kettle for ultrasonic treatment and stirring, then heating is carried out at the temperature of 140-200 DEG C for reaction, after the reaction is ended, natural cooling, suction filtration, washing and drying treatment are carried out, nitriding treatment is carried out on obtained powder at the temperature of 700-900 DEG C, and cooling is carried out to reach the room temperature so as to obtain the three-dimensional titanium nitride. The method has the advantages of being simple to operate, cheap in raw materials capable of being used for large-scale production; and the prepared three-dimensional titanium nitride hasthe advantages of being g
Author FENG GUANGWEN
ZHOU QIUMAN
CHEN XIAOXIANG
XIAO CHUMIN
WEI ZHIGANG
PAN ZHANCHANG
HUANG ZHAOJIE
HU GUANGHUI
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– fullname: CHEN XIAOXIANG
– fullname: FENG GUANGWEN
– fullname: HU GUANGHUI
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Snippet The invention belongs to the field of preparation of inorganic semiconductor nano materials, and discloses three-dimensional titanium nitride as well as a...
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Title Three-dimensional titanium nitride as well as preparation method and application thereof
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