A non-insulating gate type GaN HEMT driving circuit and control method

• Main Authors: PENG ZIHE, ZHANG YING, QIN HAIHONG, XU HUAJUAN, XIU QIANG
• Format: Patent
• Language: Chinese; English
• Published: 15.01.2019
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRICITY; GENERATION

The invention discloses a non-insulating gate type GaN HEMT driving circuit and a control method thereof. The driving circuit is a non-capacitive high-speed driving circuit for the non-insulating gatetype GaN HEMT, which is used for driving the GaN HEMT and comprises a high-speed on circuit, a steady-state driving circuit, an off circuit and an inverting circuit. A control method implemented by the drive circuit capable of providing a sufficiently large current spike during the GaN HEMT switching process, The GaN HEMT can be driven with high speed and high efficiency by providing enough driving current to keep the GaN HEMT conducting normally in steady state, and the gate-source negative voltage does not appear after the GaN HEMT is turned off, which reduces the reverse conduction loss ofthe GaN HEMT, and reduces the driving loss as much as possible when the GaN HEMT is switched at high speed. 本发明公开了种非绝缘栅型GaN HEMT驱动电路及控制方法，所述驱动电路是针对种非绝缘栅型GaN HEMT的无容式高速驱动电路，用于驱动GaN HEMT，包括高速开通电路、稳态驱动电路、关断电路和反相电路。通过所述驱动电路实现的控制方