Method and mathematical model for simulating hot spot of photovoltaic panel

• Main Authors: XU YANG, XUE ZHAOLONG, CAI LEI, DING XUFEI, GAO QIANBO, TIAN CHANGJIAN, SHAO SHAOGUI, HE SONGYUAN, CHEN GONG, JI PENG
• Format: Patent
• Language: Chinese; English
• Published: 01.01.2019
• Subjects: CALCULATING; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; PHYSICS

The invention discloses a hot spot simulation method and a mathematical model of a photovoltaic panel. The method comprises the following steps: a physical photovoltaic panel model is built; the physical photovoltaic panel is composed of a plurality of photovoltaic panel units; the physical photovoltaic panel is connected in series with a digital multimeter, a current source and a sliding rheostat; the equivalent model of photovoltaic panel in normal state includes current source, diode D and shunt resistor Rsh connected in parallel with current source, series resistor Rs connected in series with current source and sliding rheostat resistor R. The equivalent model of the shielded PV panel consists of a series branch consisting of a current source and a series resistor Rs, a diode D in parallel with the series branch and a parallel resistor Rsh, respectively. Simulation of hot spots: The magnitude of the current is measured by the change of temperature, so as to realize the simulation of hot spots. The method