Semiconductor device, manufacturing method thereof, and measuring method of overlay error

• Main Authors: ZENG YUNHENG, ZHENG BOZHONG, CHEN LONGYI, SU XIANGYU, FU SHIQI, WANG YUQING, CHEN GUISHUN, LIN XINQIN, ZHU JIAHONG, ZHANG QIKANG, CHEN KAIXIONG
• Format: Patent
• Language: Chinese; English
• Published: 07.12.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a semiconductor device, a manufacturing method thereof, and a measuring method of overlay errors. The measuring method comprises the steps of: executing diffraction-based overlay error measurement on a first test target of a substrate, so as to obtain a first diffraction intensity difference value of a first superimposed structure of the corresponding first test target, andobtain a second diffraction intensity difference value of a second superimposed structure of the corresponding first test target; and acquiring a third diffraction intensity difference value of the corresponding first test target according to an average value of the first diffraction intensity difference value and the second diffraction intensity difference value. 种半导体装置及其制造方法和覆盖误差的测量方法，包括：对基底的第测试目标执行基于绕射的覆盖误差测量，以取得对应第测试目标的第叠置结构的第绕射强度差值，以及取得对应第测试目标的第二叠置结构的第二绕射强度差值；以及根据第绕射强度差值与第二绕射强度差值的平均值，取得对应第测试目标的第三绕射强度差值。