一种超宽禁带氧化物合金半导体外延薄膜材料及其制备方法和应用

• Format: Patent
• Language: Chinese
• Published: 07.01.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

本发明涉及一种超宽禁带氧化物合金半导体外延薄膜材料及其制备方法和应用。该材料为HfSnO三元合金化合物半导体外延薄膜，包括：SnO和HfO，其中，x大于0，且小于1。本发明所提供的HfSnO材料是通过SnO和HfO按照一定的摩尔比例固溶而成的三元合金化合物半导体；因为Hf与Sn化合价相同，离子半径相近，且HfO的带隙达到5.5eV，晶格类型与SnO的晶格类型也十分接近，所以通过铪离子取代锡离子获得了超宽禁带、直接光电跃迁HfSnO合金半导体体系。采用脉冲激光沉积法实现了高质量HfSnO合金薄膜外延生长，在薄膜表面利用真空蒸镀法制备平行金属电极，制备了MSM和光电导性光电探测器件，实现对深紫外波段及日盲区光波强度的精确灵敏探测。 The invention relates to an ultra-wide forbidden band oxide alloy semiconductor epitaxial film material and a preparation method and application thereof. The material is an HfxSn1-xO2 ternary alloy compound semiconductor epitaxial film comprising SnO2 and HfO2, wherein x is greater than 0 and less than 1. The HfxSn1-xO2 material provided by the invention is a ternary alloy compound semiconductor formed by solid solution of the SnO2 and the HfO2 in a certain molar ratio; since Hf<4+> and Sn<4+> have the same valence, and similar in ionic radius, and the band gap of the HfO2 reaches 5.5 eV. Thelattice type of the HfO2 and the lattice type of the SnO2 are also very close. Therefore, an ultra-wide for