Switching device with charge distribution structure

• Main Authors: RAMDANI, JAMAL, KUDYMOV, ALEXEY
• Format: Patent
• Language: Chinese; English
• Published: 14.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a substrate and a first active layer disposed over the substrate. The semiconductor device also includes a second active layer disposed on the first active layer such that a lateral conductive channel arises between the first active layer and the second active layer, a source, gate and drain contact are disposed over the second active layer. A conductive charge distribution structure is disposed over the second active layer between the gate and drain contacts. The conductive charge distribution structure is capacitively coupled to the gate contact. 种半导体器件，其包括衬底和布置在所述衬底上的第有源层。所述半导体器件也包括布置在所述第有源层上的第二有源层，使得在所述第有源层和所述第二有源层之间出现横向导电沟道。在所述第二有源层上布置有源极、栅极和漏极接触部。导电电荷分布结构布置在第二有源层上位于栅极接触部和漏极接触部之间。导电电荷分布结构电容耦合到栅极接触部。