Bearing wafer rapid thinning method applied to uncooled infrared focal plane

• Main Authors: CHEN ZHEQUAN, FANG ZHONG, ZHOU TONG, SU YAN, HE YONG, JIANG BO
• Format: Patent
• Language: Chinese; English
• Published: 15.06.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a bearing wafer rapid thinning method applied to an uncooled infrared focal plane. The method comprises the following steps that a wafer is adhered on a tray; the tray is adsorbed on a wafer thinning machine carrying table, the carrying table is fixed on the main shaft of the thinning machine, the mill knife is fixed on the mill knife shaft, and the silicon substrate layerof the wafer is thinned to the preset thickness; the tray is inversely arranged on a wafer polishing machine millstone, the silicon substrate layer contacts the polishing machine millstone, and the tray is connected with the rotating shaft of the polishing machine to perform polishing; the silicon substrate layer is removed until the silicon dioxide of the BOX layer is completely exposed; and theBOX layer is removed to a sensitive material film layer so as to complete wafer thinning. The method is shorter in process time, lower in the requirements for the process equipment and low in cost without introducing extract p