Cadmium telluride thin film solar cell and preparation method thereof
The invention discloses a cadmium telluride thin film solar cell and a preparation method thereof. The solar cell includes a substrate layer, a barrier layer, a transparent conductive layer, an n-typesemiconductor layer, a p-type semiconductor layer, a back contact layer and a back electrode layer i...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
19.01.2018
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a cadmium telluride thin film solar cell and a preparation method thereof. The solar cell includes a substrate layer, a barrier layer, a transparent conductive layer, an n-typesemiconductor layer, a p-type semiconductor layer, a back contact layer and a back electrode layer in sequence. The n-type semiconductor layer includes a cadmium sulfide layer and a magnesium-doped cadmium sulfide layer. The cell can use a thinner n layer, so as to reduce the absorption of light by the n layer producing no photocurrent and increase the short circuit current of the cadmium telluride thin film solar cell.
本发明公开种碲化镉薄膜太阳能电池及其制备方法,所述太阳能电池依次设置有衬底层、阻挡层、透明导电层、n型半导体层、p型半导体层、背接触层、背电极层,所述n型半导体层包括硫化镉层和掺镁硫化镉层。该电池可以采用较薄的n层,减少不产生光电流的n层对光的吸收,增加碲化镉薄膜太阳电池的短路电流。 |
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Bibliography: | Application Number: CN20171774110 |