Cadmium telluride thin film solar cell and preparation method thereof

The invention discloses a cadmium telluride thin film solar cell and a preparation method thereof. The solar cell includes a substrate layer, a barrier layer, a transparent conductive layer, an n-typesemiconductor layer, a p-type semiconductor layer, a back contact layer and a back electrode layer i...

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Bibliographic Details
Main Authors MA LIYUN, PAN JINGONG, YIN XINJIAN, PENG SHOU, YANG SHAOFEI
Format Patent
LanguageChinese
English
Published 19.01.2018
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Summary:The invention discloses a cadmium telluride thin film solar cell and a preparation method thereof. The solar cell includes a substrate layer, a barrier layer, a transparent conductive layer, an n-typesemiconductor layer, a p-type semiconductor layer, a back contact layer and a back electrode layer in sequence. The n-type semiconductor layer includes a cadmium sulfide layer and a magnesium-doped cadmium sulfide layer. The cell can use a thinner n layer, so as to reduce the absorption of light by the n layer producing no photocurrent and increase the short circuit current of the cadmium telluride thin film solar cell. 本发明公开种碲化镉薄膜太阳能电池及其制备方法,所述太阳能电池依次设置有衬底层、阻挡层、透明导电层、n型半导体层、p型半导体层、背接触层、背电极层,所述n型半导体层包括硫化镉层和掺镁硫化镉层。该电池可以采用较薄的n层,减少不产生光电流的n层对光的吸收,增加碲化镉薄膜太阳电池的短路电流。
Bibliography:Application Number: CN20171774110