Semiconductor Devices, Finfet Devices With Optimized Strained-Sourece-Drain Recess Profiles And Methods Of Forming The Same

• Main Authors: LI-TE HSU, YING MING WANG, KUN YU LIN, YING TING HSIA
• Format: Patent
• Language: Chinese; English
• Published: 03.10.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Semiconductor devices, FinFET devices with optimized strained-source-drain recess profiles and methods of forming the same are provided. One of the semiconductor devices includes a substrate, a gate stack over the substrate and a strained layer in a recess of the substrate and aside the gate stack. Besides, a ratio of a depth at the greatest width of the recess to a width of the gate stack ranges from about 0.5 to 0.7. 本发明的实施例提供了具有最佳应变的源极漏极凹槽轮廓的半导体器件、FinFET器件及其形成方法。个半导体器件包括衬底、位于衬底上方的栅极堆叠件以及位于衬底的凹槽中和栅极堆叠件旁边的应变层。此外，凹槽的最大宽度处的深度与栅极堆叠件的宽度的比率在从约0.5至0.7的范围。