Manufacturing method for light emitting diode
The invention discloses a manufacturing method for a light emitting diode. The manufacturing method comprises the following technological steps of providing a substrate, performing epitaxial growth of a light emitting epitaxial layer which is formed by an N type semiconductor layer, a light emitting...
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Format | Patent |
Language | Chinese English |
Published |
22.02.2017
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Online Access | Get full text |
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Abstract | The invention discloses a manufacturing method for a light emitting diode. The manufacturing method comprises the following technological steps of providing a substrate, performing epitaxial growth of a light emitting epitaxial layer which is formed by an N type semiconductor layer, a light emitting layer and a P type semiconductor layer in a stacking manner, and defining the upper surface of the light emitting epitaxial layer into a P type region and an N type region; forming a metal film layer on the light emitting epitaxial layer; performing quick annealing treatment to enable the metal film layer to be subjected to sphere agglomeration to form metal particles; forming a mask layer on the light emitting epitaxial layer and the metal particles, and performing patterning on the mask layer to expose the N type region; taking the metal particles and the mask layer as a mask structure, performing an etching process to etch the N type region until the N type semiconductor layer is exposed, and performing roughen |
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AbstractList | The invention discloses a manufacturing method for a light emitting diode. The manufacturing method comprises the following technological steps of providing a substrate, performing epitaxial growth of a light emitting epitaxial layer which is formed by an N type semiconductor layer, a light emitting layer and a P type semiconductor layer in a stacking manner, and defining the upper surface of the light emitting epitaxial layer into a P type region and an N type region; forming a metal film layer on the light emitting epitaxial layer; performing quick annealing treatment to enable the metal film layer to be subjected to sphere agglomeration to form metal particles; forming a mask layer on the light emitting epitaxial layer and the metal particles, and performing patterning on the mask layer to expose the N type region; taking the metal particles and the mask layer as a mask structure, performing an etching process to etch the N type region until the N type semiconductor layer is exposed, and performing roughen |
Author | WANG FENG XU CHENKE XIA ZHANGGEN PENG KANGWEI LIN SUHUI HONG LINGYUAN |
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DocumentTitleAlternate | 种发光二极管的制作方法 |
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Notes | Application Number: CN20161775319 |
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Snippet | The invention discloses a manufacturing method for a light emitting diode. The manufacturing method comprises the following technological steps of providing a... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Manufacturing method for light emitting diode |
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