Manufacturing method for light emitting diode

• Main Authors: XIA ZHANGGEN, XU CHENKE, HONG LINGYUAN, LIN SUHUI, WANG FENG, PENG KANGWEI
• Format: Patent
• Language: Chinese; English
• Published: 22.02.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a manufacturing method for a light emitting diode. The manufacturing method comprises the following technological steps of providing a substrate, performing epitaxial growth of a light emitting epitaxial layer which is formed by an N type semiconductor layer, a light emitting layer and a P type semiconductor layer in a stacking manner, and defining the upper surface of the light emitting epitaxial layer into a P type region and an N type region; forming a metal film layer on the light emitting epitaxial layer; performing quick annealing treatment to enable the metal film layer to be subjected to sphere agglomeration to form metal particles; forming a mask layer on the light emitting epitaxial layer and the metal particles, and performing patterning on the mask layer to expose the N type region; taking the metal particles and the mask layer as a mask structure, performing an etching process to etch the N type region until the N type semiconductor layer is exposed, and performing roughen