Active voltage drive and control circuit for inhibiting SiC MOSFET turnoff overvoltage and control method thereof

• Main Authors: ZHANG YING, ZHU ZIYUE, YU JUNYUE, QIN HAIHONG, XU HUAJUAN
• Format: Patent
• Language: Chinese; English
• Published: 04.01.2017
• Subjects: BASIC ELECTRONIC CIRCUITRY; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRICITY; EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS; GENERATION; PULSE TECHNIQUE

The invention discloses an active voltage drive and control circuit for inhibiting SiC MOSFET turnoff overvoltage and a control method thereof, and belongs to the field of power electronics and electrotechnics. The control circuit mainly comprises five parts: a sampling circuit, a measurement amplifier, an analogue switch, a superposed circuit and a drive circuit; the control method comprises the following steps: acquiring drain source voltage in real time when turning off the SiC MOSFET to perform feedback, dynamically compensating a grid drive signal when turning off the SiC MOSFET, thereby avoiding the influence from the device parameter dispersibility; controlling the drain-source voltage peak in turnoff within a certain range, thereby avoiding the influence from the device parameter dispersibility. 本发明为种抑制SiC MOSFET关断过压的有源电压驱动控制电路及其控制方法，属于电力电子技术与电工技术领域，控制电路主要包括采样电路、测量放大器、模拟开关、叠加电路和驱动电路五部分；控制方法通过实时采集SiC MOSFET关断时的漏源电压进行反馈，对SiC MOSFET关断时的栅极驱动信号进行动态补偿，从而实现不受器件参数分散性的影响，将其关断时的漏源电压峰值控制在定范围内，从而实现不受器件参数分散性的影响。