SiC MOSFET gradual-change level driving circuit and method applied to direct current solid state power controller

The invention discloses a SiC MOSFET gradual-change level driving circuit and method applied to a direct current solid state power controller. The method comprises the following steps: after passing a driving signal output by a driving circuit through an inverting circuit, outputting a first operati...

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Bibliographic Details
Main Authors ZHU ZIYUE, NIE XIN, QIN HAIHONG, XU HUAJUAN
Format Patent
LanguageChinese
English
Published 16.11.2016
Subjects
BASIC ELECTRONIC CIRCUITRY
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
PULSE TECHNIQUE
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Summary:The invention discloses a SiC MOSFET gradual-change level driving circuit and method applied to a direct current solid state power controller. The method comprises the following steps: after passing a driving signal output by a driving circuit through an inverting circuit, outputting a first operational amplifier output signal; passing the first operational amplifier output signal through a trapezoidal wave generation circuit, carrying out integration on the first operational amplifier output signal and outputting a second operational amplifier output signal; carrying out in-phase proportion amplification on the driving signal via an in-phase proportion operational circuit and outputting a sixth connection signal; and carrying out addition calculation on the second operational amplifier output signal and the sixth connection signal, and outputting a gradual-change level circuit output signal, wherein the signal is the gradual-change level driving signal. According to the SiC MOSFET gradual-change level drivin
Bibliography:Application Number: CN20161551724