Semiconductor device

• Main Authors: JUNG-HAN LEE, JAE-HWAN LEE, SEUNG-MO HA, SANG-SU KIM, HWAN-WOOK CHOI, TAE-JONG LEE
• Format: Patent
• Language: Chinese; English
• Published: 26.10.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided herein is a semiconductor device. The semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope. 本公开提供了半导体器件。种半导体器件包括在基板上的由隔离层限定的多个有源鳍、在有源鳍和隔离层上的栅结构、以及覆盖栅结构的侧壁的栅间隔物结构。栅结构的侧壁包括分别具有第坡度、第二坡度和第三坡度的第区域、第二区域和第三区域。第二坡度从第二区域的底部朝向顶部增大。第二坡度在第二区域的底部具有小于第坡度的值。第三坡度大于第二坡度。