Resin film for semiconductor device, and method for manufacturing semiconductor device

Resin film for semiconductor device containing an inorganic ion scavenger that has been subjected to a silane coupling treatment. 种半导体装置用树脂薄膜，其含有经硅烷偶联处理的无机离子捕获剂。

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Bibliographic Details
Main Authors Misumi Sadahito, Onishi Kenji, Sugo Yuki, Shishido Yuichiro, Kimura Yuta
Format Patent
LanguageChinese
English
Published 17.08.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Resin film for semiconductor device containing an inorganic ion scavenger that has been subjected to a silane coupling treatment. 种半导体装置用树脂薄膜，其含有经硅烷偶联处理的无机离子捕获剂。
Bibliography:Application Number: CN2014870899