Drive circuit of SiC MOSFET

• Main Authors: Xu Huajuan, Xie Haotian, Nie Xin, Qin Haihong
• Format: Patent
• Language: Chinese; English
• Published: 17.08.2016
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRONIC CIRCUITRY; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRICITY; GENERATION; PULSE TECHNIQUE

The invention provides a drive circuit of a Sic MOSFET. The drive circuit comprises a signal receiving circuit, a level conversion circuit, a push-pull amplification circuit, a bridge arm crosstalk suppression circuit, a full-bridge rectification circuit, a first isolation transformer and a second isolation transformer. According to the drive circuit of the Sic MOSFET, isolation of the drive circuit and a control circuit is achieved by means of the isolation transformers, the control circuit can work in a normal temperature environment, on the basis that the defect that a high-temperature-resistant integrated control chip is difficult to obtain is overcome, a high temperature work capacity is achieved, and line parasitic parameters are reduced; due to the fact that an auxiliary high-temperature-resistant BJT is connected with the Sic MOSFE in a complementary mode, when a switching tube is switched off, a parallel capacitor is connected to the drive circuit, and the bridge arm circuit crosstalk phenomenon is i