Fabrication process for cross matrix-type magnetic random access memory

• Main Authors: XIAO RONGFU, GUO YIMIN, CHEN JUN
• Format: Patent
• Language: Chinese; English
• Published: 27.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a fabrication process for a cross matrix-type magnetic random access memory. The fabrication process comprises the following steps of forming a bottom electrode; forming a magnetic memory cell array at the top of the bottom electrode, in which multiple thin films for making magnetic tunnel junctions and a NP/M/PN structure or a PN/M/NP structure serially connected with the junctions are formed, NP is an NP junction, PN is a PN junction, and M is a metal layer; and forming a top electrode at the top of the magnetic memory cell array. In the cross matrix-type magnetic random access memory prepared according to the invention, a pair of serial-connected diodes of which polarity connection directions are opposite are used to substitute triodes to serve as current flow direction selectors in a magnetic memory unit, so that a complicated power supply circuit is changed to a simple cross type power supply mode. By the fabrication process, the production process of the magnetic random access mem