Discrete Semiconductor Transistor

A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of -40 DEG C. is greater than at the temperature of 150 DEG C.

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Bibliographic Details
Main Authors ANDREAS KIEP, HANS-JOACHIM SCHULZE, STEFAN WILLKOFER
Format Patent
LanguageEnglish
Published 27.01.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of -40 DEG C. is greater than at the temperature of 150 DEG C.
AbstractList A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of -40 DEG C. is greater than at the temperature of 150 DEG C.
Author ANDREAS KIEP
HANS-JOACHIM SCHULZE
STEFAN WILLKOFER
Author_xml – fullname: ANDREAS KIEP
– fullname: HANS-JOACHIM SCHULZE
– fullname: STEFAN WILLKOFER
BookMark eNrjYmDJy89L5WRQdMksTi5KLUlVCE7NzUzOz0spTS7JL1IIKUrMK84sBjJ5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8s5-hgamRhYGZsZmjMTFqAIiyJ88
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID CN105280636A
GroupedDBID EVB
ID FETCH-epo_espacenet_CN105280636A3
IEDL.DBID EVB
IngestDate Fri Aug 30 05:41:09 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_CN105280636A3
Notes Application Number: CN201510331757
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160127&DB=EPODOC&CC=CN&NR=105280636A
ParticipantIDs epo_espacenet_CN105280636A
PublicationCentury 2000
PublicationDate 20160127
PublicationDateYYYYMMDD 2016-01-27
PublicationDate_xml – month: 01
  year: 2016
  text: 20160127
  day: 27
PublicationDecade 2010
PublicationYear 2016
RelatedCompanies INFINEON TECHNOLOGIES AG
RelatedCompanies_xml – name: INFINEON TECHNOLOGIES AG
Score 3.0263903
Snippet A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Discrete Semiconductor Transistor
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160127&DB=EPODOC&locale=&CC=CN&NR=105280636A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsUhJMUw2N07VTbWwTNM1SU420E2yMEvRNQYKA1vkwEoFPNHu62fmEWriFWEawcSQBdsLAz4ntBx8OCIwRyUD83sJuLwuQAxiuYDXVhbrJ2UChfLt3UJsXdSgvWNDM9BMqpqLk61rgL-Lv7Oas7Ots5-aXxCwrWsKmkM0NnNkZmAFNaNB5-y7hjmBdqUUIFcpboIMbAFA0_JKhBiYUvOEGTidYTevCTNw-EInvIFMaN4rFmFQdMkEZnFgG1chGLSgPT8PdFJrfpECuLYBH_YhyqDo5hri7KELtCse7rF4Zz-Es4zFGFiAHf5UCQYFC2ATBthZtARmlUQTwxTQUYGWicYWaalJJqCubJokgxRuc6TwSUozcIECCTSEYGQuw8BSUlSaKgusVEuS5MChAQD6U3n8
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsUhJMUw2N07VTbWwTNM1SU420E2yMEvRNQYKA1vkwEoFPNHu62fmEWriFWEawcSQBdsLAz4ntBx8OCIwRyUD83sJuLwuQAxiuYDXVhbrJ2UChfLt3UJsXdSgvWNDM9BMqpqLk61rgL-Lv7Oas7Ots5-aXxCwrWsKmkM0NnNkZmA1B53OC2o6hTmBdqUUIFcpboIMbAFA0_JKhBiYUvOEGTidYTevCTNw-EInvIFMaN4rFmFQdMkEZnFgG1chGLSgPT8PdFJrfpECuLYBH_YhyqDo5hri7KELtCse7rF4Zz-Es4zFGFiAHf5UCQYFC2ATBthZtARmlUQTwxTQUYGWicYWaalJJqCubJokgxRuc6TwScozcHqE-PrE-3j6eUszcIECDDScYGQuw8BSUlSaKgusYEuS5MAhAwDWmHzp
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Discrete+Semiconductor+Transistor&rft.inventor=ANDREAS+KIEP&rft.inventor=HANS-JOACHIM+SCHULZE&rft.inventor=STEFAN+WILLKOFER&rft.date=2016-01-27&rft.externalDBID=A&rft.externalDocID=CN105280636A