Lower Dose Rate Ion Implantation Using A Wider Ion Beam

• Main Authors: PADMANABHAN, REKHA, WAN, ZHIMIN, HOGLUND, DAVID, SAADATMAND, KOUROSH, LIN, GER-PIN, HU, SHAO-YU, KAIM, ROBERT E, BAI, XIAO, LI, CHING-I, CAI, GARY N
• Format: Patent
• Language: English
• Published: 23.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.