SEMICONDUCTOR DEVICE

The present invention provides a semiconductor device for boosting electro-static discharge tolerance. According to one embodiment, the semiconductor device includes a first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer; a first control electrode formed...

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Main Authors NAKA, TOSHIYUKI, UCHIHARA, TAKESHI, ONO, TASUKU, SAITO, YASUNOBU, YOSHIOKA, AKIRA, FUJIMOTO, HIDETOSHI
Format Patent
LanguageEnglish
Published 16.09.2015
Subjects
ELECTRICITY
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Summary:The present invention provides a semiconductor device for boosting electro-static discharge tolerance. According to one embodiment, the semiconductor device includes a first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer; a first control electrode formed on the first semiconductor layer with a first insulating layer via a first insluating film; a second control electrode formed on the first semiconductor layer via a second insulating film, and a distance between one end of the second insulating film and the first semiconductory layer is larger than a distance between one end of the first insulating film of the first control electrode and the first semiconductory layer; and a wiring electrically connected the first control electrode with the second control electrode.
Bibliography:Application Number: CN201410444337