Method for laser pulse sputtering deposition preparation of polycrystalline silicon thin film

• Main Authors: WANG ZHOU, LUO XULIANG, FU CHUANQI, YONG FAN, ZHANG QINGLE, DONG GUIFU
• Format: Patent
• Language: English
• Published: 22.07.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a method for laser pulse sputtering deposition preparation of a polycrystalline silicon thin film, wherein the method includes the following steps: pre-treating a base plate; putting a film plating material silicon target and the base plate into a vacuum system, vacuumizing to 1.0*10<-4> Pa, wherein the base plate temperature is 500-700 DEG C, and the distance between the base plate and the silicon target is 3-8 cm; then taking an excimer laser as a laser source, emitting laser, and with the frequency of 2-5 HZ, sputtering for 2-4 h; and finally annealing for 2-4 h at the temperature of 600-1000 DEG C, and thus obtaining the polycrystalline silicon thin film, wherein the base plate is a copper sheet or quartz glass. The prepared polycrystalline silicon thin film has fine grains and uniform size distribution, has quite good smoothness and compactness, has a better crystallization degree, moreover, has hardly any impurity atoms, can produce fine grains on various base plates, and is simple in process, good in repeatability, low in cost and suitable for industrialized production.