Epitaxial wafer cleaning and packaging method

• Main Authors: WANG LEI, SHENG FANGYU, FENG QUANLIN, KU LIMING, LI ZONGFENG, LI QINGBAO, ZHAO ERJING, YAN ZHIRUI
• Format: Patent
• Language: English
• Published: 29.04.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses an epitaxial wafer cleaning and packaging method. A cleaning process comprises the following steps: (1) performing mega-sonic cleaning, wherein an APM cleaning solution is used, the cleaning time is 600-1200 s, the cleaning temperature is 60 DEG C and the mega-sonic frequency is 870kHz; (2) draining quickly and sprinkling: performing quick draining and circulating treatment on the surface of an epitaxial wafer by using cold water with the temperature of 25 DEG C for 3 times, and sprinkling the surface of the epitaxial wafer by using hot water with the temperature of 60 DEG C for 300s; (3) drying, wherein an isopropyl alcohol drying method is adopted, hot nitrogen is used as a carrier gas, the flow velocity of the nitrogen is 12 m/s, the drying temperature is 60 DEG C, and the drying time is 630s. A packaging process comprises the following steps: packaging the cleaned epitaxial wafer by using an inner packaging bag: filling the inner packaging bag with nitrogen firstly and then vacuumizing during packaging so as to remove air in the bag; after packaging, fixing a drying agent onto the inner packaging bag by using a transparent adhesive tape, and then packaging by using an outer packaging bag through the same method as the inner packaging bag packaging method. By adopting the epitaxial wafer cleaning and packaging method, an ideal surface state of the epitaxial wafer can be obtained, and after long-time storage, a haze defect does not appear on the surface of the epitaxial wafer.