Copper indium diselenide nanocrystalline silicon thin film solar cell with graphene as conductive material and preparation method thereof

• Main Authors: DELIANG WU, CHUNLONG LI, YUNRONG LUO, DONGNI CHEN
• Format: Patent
• Language: English
• Published: 04.02.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

The invention discloses a copper indium diselenide nanocrystalline silicon thin film solar cell with graphene as a conductive material and a preparation method thereof. P-type heavily doped graphene is used as a substrate; a p-type copper indium diselenide thin film is prepared on the p-type heavily...