Semiconductor device

• Main Authors: YASUNOBU SAITO, TAKESHI UCHIHARA, TASUKU ONO, HIDETOSHI FUJIMOTO, TAKAAKI YASUMOTO, AKIRA YOSHIOKA, NAOKO YANASE
• Format: Patent
• Language: Chinese; English
• Published: 24.09.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device comprises a first semiconductor layer formed by a first nitride semiconductor, a second semiconductor layer formed on the first semiconductor layer, a source electrode formed on the second semiconductor layer, a drain electrode formed on the second semiconductor layer, a first grid electrode formed on the second semiconductor layer between the source electrode and the drain electrode, a second grid electrode formed on the second semiconductor layer between the source electrode and the first grid electrode via an insulation film, and a third grid electrode formed on the second semiconductor layer between the drain electrode and the first grid electrode via the insulation film, the second semiconductor layer is formed by a second nitride semiconductor whose band gap is larger than the first nitride semiconductor, the first grid electrode is connected with the second semiconductor layer in a Schottky manner, the second grid electrode is electrically connected with the first grid electrode,