Method for repairing side wall damage of ultralow dielectric constant film

The invention discloses a method for repairing side wall damage of an ultralow dielectric constant film. The method comprises the following steps: depositing the ultralow dielectric constant film on a semiconductor substrate; etching the ultralow dielectric constant film through the dry method to fo...

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Bibliographic Details
Main Author ZENG SHAOHAI
Format Patent
LanguageChinese
English
Published 22.01.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a method for repairing side wall damage of an ultralow dielectric constant film. The method comprises the following steps: depositing the ultralow dielectric constant film on a semiconductor substrate; etching the ultralow dielectric constant film through the dry method to form a side wall structure inside; adopting an unsaturated hydrocarbon chemical liquor containing -CH3 to clean through the wet method; implementing ultraviolet irradiation. The method can repair the side wall damage of the ultralow dielectric constant film, so that the aperture and the porosity of the ultralow dielectric constant film are recovered, and effective dielectric constants are remained in minimal values.
Bibliography:Application Number: CN201310525014