Rendering method for position measurement distribution image of epitaxy susceptor corresponding to light-emitting diode epitaxy wafer

• Main Author: JUNG HYUNDON
• Format: Patent
• Language: Chinese; English
• Published: 24.07.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a rendering method for a position measurement distribution image of an epitaxy susceptor corresponding to a light-emitting diode epitaxy wafer. By the adoption of the rendering method, an engineer can effectively monitor changes in an epitaxy wafer device chamber and improve yield rate. The rendering method includes the following step: measuring a plurality of measuring positions of a plurality of batches of the light-emitting diode epitaxy wafers to obtain measurement data of all the measuring positions, wherein each epitaxy wafer has a first sequence which corresponds to a configuration position of a relevant epitaxy susceptor and a second sequence which corresponds to an address of the relevant epitaxy wafer; building the position measurement distribution image of the corresponding epitaxy susceptor according to the first sequence and the second sequence with adoption of a color scale mode and measurement data of each batch of the light-emitting diode epitaxy wafer; and displaying