Trench-gate RESURF semiconductor device and manufacturing method
A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the semiconductor drift region between the RESURF pillars, and this provides additional gate shielding which improves the electrical characteristi...
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| Main Authors | , |
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| Format | Patent |
| Language | Chinese English |
| Published |
12.06.2013
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the semiconductor drift region between the RESURF pillars, and this provides additional gate shielding which improves the electrical characteristics of the device. |
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| AbstractList | A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the semiconductor drift region between the RESURF pillars, and this provides additional gate shielding which improves the electrical characteristics of the device. |
| Author | PEAKE STEVEN RUTTER PHIL |
| Author_xml | – fullname: PEAKE STEVEN – fullname: RUTTER PHIL |
| BookMark | eNqNyjsOgkAQANAttPB3h_EAJG42YqshECsLxJpMZgfYRGbJfjy_jQewes3bqpV44Y26doGFpmLExNDWz1fbQOTZkRebKfkAlj-OGFAszCh5QEo5OBlh5jR5u1frAd-RDz936tjUXXUvePE9xwWJhVNfPfTJ6LM2l_Jm_jlfrEEyuw |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | CN103151376A |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_CN103151376A3 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 16:29:26 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | Chinese English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_CN103151376A3 |
| Notes | Application Number: CN20121517554 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130612&DB=EPODOC&CC=CN&NR=103151376A |
| ParticipantIDs | epo_espacenet_CN103151376A |
| PublicationCentury | 2000 |
| PublicationDate | 20130612 |
| PublicationDateYYYYMMDD | 2013-06-12 |
| PublicationDate_xml | – month: 06 year: 2013 text: 20130612 day: 12 |
| PublicationDecade | 2010 |
| PublicationYear | 2013 |
| RelatedCompanies | NXP B.V |
| RelatedCompanies_xml | – name: NXP B.V |
| Score | 3.0051973 |
| Snippet | A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Trench-gate RESURF semiconductor device and manufacturing method |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130612&DB=EPODOC&locale=&CC=CN&NR=103151376A |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fS8MwED7mFPVNp6LzBxGkb8W1dm32UNSlLUNYN8YmexttkzIF27F2CP71XrLO-aJvIYFwSfhyuct9dwB3kUVTjsepO0bs6BZaKHqEdohObRp3ZLKVliO5w_3Q7k2sl2l7WoP3DRdG5Qn9VMkREVEJ4r1U9_Vi68TyVGxlcR-_YVf-GIxdT6usY7yQUWNrXtf1hwNvwDTGXBZq4chV1QwMRNPzDuziM9qR4V_-a1eyUha_VUpwBHtDnC0rj6H2NW_AAdtUXmvAfr_68MZmhb3iBJ5k-GoyVw4xgvs2GQWkkKHteSZztuZLwoWEPYkyTj6ibCU5C4qESNZlok_hNvDHrKejKLOfdc9YuJX64QzqWZ6JcyA8sWjHpiKJHNMSqeikscUFbfPUSMyolV5A8-95mv8NXsKhua72oBvmFdTL5Upco84t4xu1Wd-WP4X1 |
| link.rule.ids | 230,309,783,888,25578,76884 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bT8IwFD5BNOKbokbxVhOzt0U2BysPi0rHggqDkGF4I7t0QRM3wkZM_PWeliG-6FvTJk0v-Xp62vN9B-DGN2gc4XaqphaYqoEeiuqjH6LSJg1aQmylbgrucN9tdsfG86QxKcH7mgsjdUI_pTgiIipEvOfyvJ5vHrFsGVuZ3QZvWJXeO55lK4V3jAcyWmzFblud4cAeMIUxi7mKO7JkNgMN0fS4Bdt4xaZCZ7_z2haslPlvk-Lsw84Qe0vyAyh9zapQYevMa1XY7Rcf3lgssJcdwoMIXw1n8kGM4LqNRw7JRGh7mgjN1nRBIi5gT_wkIh9-shScBUlCJKs00Udw7XQ81lVxKNOfeU-Zuxn13TGUkzThJ0Ci0KCtJuWhb-oGj3krDoyI00YUa6Hu1-NTqP3dT-2_xiuodL1-b9p7cl_OYE9fZX5QNf0cyvliyS_Q_ubBpVy4bwaUiOU |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Trench-gate+RESURF+semiconductor+device+and+manufacturing+method&rft.inventor=PEAKE+STEVEN&rft.inventor=RUTTER+PHIL&rft.date=2013-06-12&rft.externalDBID=A&rft.externalDocID=CN103151376A |