Semiconductor structure formation method

• Main Authors: LIU XIANZHOU, SHEN SIJIE, GOU HONGYAN
• Format: Patent
• Language: Chinese; English
• Published: 10.10.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a semiconductor structure formation method. The method comprises the following steps of: providing a semiconductor substrate, wherein the semiconductor substrate comprises a first area and a second area surrounding the first area; forming a first protective ring in the second area of the semiconductor substrate, wherein the first protecting ring surrounds the first area; forming a body area and at least one channel which penetrates through the body area in the first area of the semiconductor substrate; forming a polysilicon field plate with an opening in the second area of the semiconductor substrate by the same photoetching and etching process; forming a gate oxide and a polysilicon gate in the channel, wherein an intermediate area of the first protective ring is exposed from the opening of the polysilicon field plate; and forming a source area in the body area of the polysilicon gate. Because the polysilicon field plate, the gate oxide and the polysilicon gate are formed in the same