Using a Nearby Cell to Provide Field Assisted Switching in a Magnetic Memory Array
Method and apparatus for writing data to a magnetic memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a selected magnetic memory cell to initiate magnetic precession of the selected cell to...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
22.07.2015
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Subjects | |
Online Access | Get full text |
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Summary: | Method and apparatus for writing data to a magnetic memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a selected magnetic memory cell to initiate magnetic precession of the selected cell to a desired magnetic state. A field assist current is concurrently flowed through an adjacent memory cell to generate a magnetic field that assists in the precession of the selected cell to the desired magnetic state. |
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Bibliography: | Application Number: CN201110386400 |