Low-temperature polysilicon thin film transistor detector and preparation method thereof

• Main Authors: QIU CHENGBIN, LIU LIN, YE YUCHENG
• Format: Patent
• Language: Chinese; English
• Published: 04.04.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a low-temperature polysilicon thin film transistor detector and a preparation method of the low-temperature polysilicon thin film transistor detector. The low-temperature polysilicon thin film transistor detector is manufactured by utilizing a low-temperature polysilicon thin film transistor process. The preparation method comprises the following steps of: firstly depositing by utilizing a chemical gas phase, depositing an amorphous silicon thin film layer on a glass substrate, converting an amorphous silicon thin film into a polysilicon thin film by utilizing an excimer laser annealing method and manufacturing the polysilicon thin film transistor. When the detector is manufactured, a plurality of drive circuits are simultaneously integrated onto the glass substrate so as to obtain high degree of integration, reduce the cost of the detector and simultaneously obtain better performance.