Back-illuminated cmos image sensors

A back-illuminated image sensor (500) includes a sensor layer (606) disposed between an insulating layer (604) and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors (616) formed in the sensor layer and a well (800) that spans the imagi...

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Bibliographic Details
Main Authors STEVENS ERIC GORDON, SUMMA JOSEPH R, ANDERSON TODD JEFFERY, TIVARUS CRISTIAN ALEXANDRU, MCCARTEN JOHN P
Format Patent
LanguageChinese
English
Published 22.02.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A back-illuminated image sensor (500) includes a sensor layer (606) disposed between an insulating layer (604) and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors (616) formed in the sensor layer and a well (800) that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer including a region formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface (704) between the sensor layer and the insulating layer.
Bibliography:Application Number: CN20098154359