Method for preparing ultraviolet sensor with gallium oxide one-dimensional sub-micrometer structure

• Main Authors: XIN XIANDONG, HAO WEICHANG, CHENG JINYANG, WANG TIANMIN
• Format: Patent
• Language: Chinese; English
• Published: 19.10.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention provides a method for preparing an ultraviolet sensor with a gallium oxide one-dimensional sub-micrometer structure. The method comprises the following six steps of: 1, placing a silicon carbide (SiC) substrate carrying metal gallium in a heating region of a tube-type furnace to heat; 2, ventilating argon into the furnace before the temperature reaches 500 DEG C, continuously heating till the temperature is 900-1,000 DEG C, and preserving the heat for 1-3 hours; 3, cooling to a room temperature so as to obtain white floccus gallium oxide (Ga2O3) one-dimensional sub-micrometer structure; 4, picking out one or more prepared Ga2O3 one-dimensional sub-micrometer structures on the SiC substrate by using a semiconductor probe and placing on a sensor substrate; 5, fixing all the Ga2O3 one-dimensional sub-micrometer structures on the sensor substrate, and evaporating and plating aurum (Au) or argentum (Ag) to prepare an electrode by using a magnetron sputtering or thermal evaporation coating device; and