Method for depositing a film onto a substrate

• Main Authors: BRENDEL UWE, DITTRICH HERBERT, BASCH ANGELIKA, TOPA DAN, SCHIMPER HERMANN-JOSEF, STADLER ANDREAS
• Format: Patent
• Language: Chinese; English
• Published: 02.03.2011
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Disclosed is a method for depositing a film onto a substrate, with a sputter deposition process, wherein the sputter deposition process is a direct current sputter deposition, wherein the film consists of at least 90 wt% of an inorganic material having semiconductor properties, whereby the film of the inorganic material M2 is directly deposited as crystalline structure, so that at least 50 wt% of the deposited film has a crystalline structure, wherein the source material (target) used for the sputter deposition consists of at least 80 wt% of the inorganic material M2, wherein the inorganic material is selected from a group comprising binary, ternary, and quaternary compounds comprising sulphur, selenium, tellurium, indium, and/or germanium.