Plane-structure InGaAs array infrared detector

• Main Authors: NING JINHUA, JIANG PEILU, ZHANG YAN, ZHANG KEFENG, TANG HENGJING, LI XUE, LI YONGFU, ZHU YAOMING, GONG HAIMEI, LI TAO
• Format: Patent
• Language: Chinese; English
• Published: 25.08.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a novel plane-structure InGaAs array infrared detector. The structural design of the infrared detector is as follows: a shallow isolation groove is formed around an array photosensitive surface on an NIN-type epitaxial wafer by etching; a PN junction area of the photosensitive surface is formed by closed tube diffusion, and a guard ring integrated with the shallow isolation groove is formed; and guard ring electrodes and annular covering electrodes are formed by thickening Cr/Au. The novel plane-structure InGaAs array infrared detector has the advantages that the shallow isolation groove and the guard ring with the integrated design can effectively inhibit cross talk between adjacent photosensitive surfaces of an array device and enlargement of the photosensitive surfaces, and the enlargement of the photosensitive surfaces can be further inhibited and the photosensitive surfaces can be accurately defined if the infrared detector is aided with small diffusion holes and the annular cover