Photovolatic devices with conductive barrier layers and foil substrates
The invention provides methods and devices for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically c...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
17.09.2008
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Subjects | |
Online Access | Get full text |
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Abstract | The invention provides methods and devices for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically conductive diffusion barrier layer, and at least one electrically conductive electrode layer above the diffusion barrier layer. The diffusion barrier layer may prevent chemical interaction between the aluminum foil substrate and the electrode layer. An absorber layer may be formed on the substrate. In one embodiment, the absorber layer may be a non-silicon absorber layer. In another embodiment, the absorber layer may be an amorphous silicon (doped or undoped) absorber layer. Optionally, the absorber layer may be based on organic and/or inorganic materials. |
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AbstractList | The invention provides methods and devices for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically conductive diffusion barrier layer, and at least one electrically conductive electrode layer above the diffusion barrier layer. The diffusion barrier layer may prevent chemical interaction between the aluminum foil substrate and the electrode layer. An absorber layer may be formed on the substrate. In one embodiment, the absorber layer may be a non-silicon absorber layer. In another embodiment, the absorber layer may be an amorphous silicon (doped or undoped) absorber layer. Optionally, the absorber layer may be based on organic and/or inorganic materials. |
Author | BOLLMAN BRENT KAO SAM |
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Notes | Application Number: CN200680034955 |
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RelatedCompanies | NANOSOLAR INC |
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Snippet | The invention provides methods and devices for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may... |
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Title | Photovolatic devices with conductive barrier layers and foil substrates |
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